STN3NF06

STN3NF06 Overview

Product belongs to the STripFET II series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.008826 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 315pF @ 25V value of 300pF @ 25V. This product's Standard. 4A (Tc) continuous drain-ID current at 25°C; This product has an 100 mOhm @ 1.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6 ns of 16 ns. This product has a 18 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 70 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 17 ns This product has a 7 ns. This product features a 3 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN3NF06 Image

STN3NF06 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series STripFET II
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.008826 oz
• Mounting-Style SMD/SMT
• Package-Case TO-261-4, TO-261AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package SOT-223
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 3.3W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 315pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 4A (Tc)
• Rds-On-Max-Id-Vgs 100 mOhm @ 1.5A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 13nC @ 10V
• Pd-Power-Dissipation 3.3 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 6 ns
• Rise-Time 18 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 4 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 70 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 17 ns
• Typical-Turn-On-Delay-Time 7 ns
• Forward-Transconductance-Min 3 S
• Channel-Mode Enhancement

STN3NF06 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is STripFET II.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Digi-ReelR Alternate Packaging.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.008826 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-261-4, TO-261AA.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is SOT-223.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 315pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 4A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 100 mOhm @ 1.5A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 3.3 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 6 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 18 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 4 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 70 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 17 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 7 ns.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 3 S.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.