STL70N10F3

Mfr. #: STL70N10F3
Produttore: STMicroelectronics
Descrizione: IGBT Transistors MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STL70N10F3 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL70N10F3 Overview

Product belongs to the STL70N10F3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 136 W This product has a 5.7 ns of 16 ns. This product has a 11 ns of 16 ns. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 8.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.

STL70N10F3 Image

STL70N10F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL70N10F3 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series STL70N10F3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Pd-Power-Dissipation 136 W
  • Fall-Time 5.7 ns
  • Rise-Time 11 ns
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 8.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 43 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 56 nC
  • Channel-Mode Enhancement

STL70N10F3

STL70N10F3 Specifications

STL70N10F3 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STL70N10F3

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is PowerFlat-8.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 136 W.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 5.7 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 11 ns.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 16 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.4 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 43 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 17 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 56 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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