STI45N10F7

Mfr. #: STI45N10F7
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 100V 45A I2PAK
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STI45N10F7 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STI45N10F7 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.073511 oz SMD/SMT Mounting-Style TO-262-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 17 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 45 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 18 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 24 ns This product has a 15 ns. Qg-Gate-Charge is 25 nC. This product operates in Enhancement channel mode for optimal performance.

STI45N10F7 Image

STI45N10F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STI45N10F7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel STripFET
  • Packaging Tube
  • Unit-Weight 0.073511 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-262-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8 ns
  • Rise-Time 17 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 45 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.5 V
  • Rds-On-Drain-Source-Resistance 18 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 24 ns
  • Typical-Turn-On-Delay-Time 15 ns
  • Qg-Gate-Charge 25 nC
  • Channel-Mode Enhancement

STI45N10F7

STI45N10F7 Specifications

STI45N10F7 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel STripFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.073511 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-262-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 60 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 8 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 17 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 45 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.5 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 18 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 24 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 15 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 25 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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