| Mfr. #: | STH290N4F6-2 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 60V H2PAK-2 |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STH290N4F6-2 Scheda dati |
RoHS compliant with Details Input bias current of SMD/SMT Package type is H2PAK-2 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 40 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 180 A; The Rds On - Drain-Source Resistance of the product is 1.7 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 115 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 48 ns - 55 C minimum operating temperature The power dissipation is 300 W. 116 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 105 ns; The 20 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH290N4F6-2 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is SMD/SMT.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed H2PAK-2
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 40 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 180 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 1.7 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 20 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 115 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: At what frequency does the Fall Time?
Q: The product Fall Time is 48 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 300 W
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 116 ns
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 105 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 20 ns