STH270N4F3-6

Mfr. #: STH270N4F3-6
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 40V 180A H2PAK-6
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STH270N4F3-6 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STH270N4F3-6 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.056438 oz SMD/SMT Mounting-Style TO-263-7 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 300 W This product has a 45 ns of 16 ns. This product has a 180 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 110 nC.

STH270N4F3-6 Image

STH270N4F3-6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STH270N4F3-6 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Unit-Weight 0.056438 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-7
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Fall-Time 45 ns
  • Rise-Time 180 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 180 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 1.4 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 110 nC

STH270N4F3-6

STH270N4F3-6 Specifications

STH270N4F3-6 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel STripFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.056438 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-263-7.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 300 W.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 45 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 180 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 180 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 40 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.4 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 110 nC

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