STFW38N65M5

Mfr. #: STFW38N65M5
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 650V 30A TO-3PF
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STFW38N65M5 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STFW38N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.245577 oz Through Hole Mounting-Style TO-3P-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 57 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9 ns of 16 ns. This product has a 9 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 30 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 95 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 71 nC. This product operates in Enhancement channel mode for optimal performance.

STFW38N65M5 Image

STFW38N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STFW38N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 0.245577 oz
  • Mounting-Style Through Hole
  • Package-Case TO-3P-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 57 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 9 ns
  • Rise-Time 9 ns
  • Vgs-Gate-Source-Voltage +/- 25 V
  • Id-Continuous-Drain-Current 30 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 95 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 71 nC
  • Channel-Mode Enhancement

STFW38N65M5

STFW38N65M5 Specifications

STFW38N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.245577 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-3P-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 57 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 9 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 9 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 30 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 95 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 71 nC.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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