STF9N60M2

Mfr. #: STF9N60M2
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 600V 5.5A TO-220FP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STF9N60M2 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF9N60M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13.5 ns of 16 ns. This product has a 7.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 780 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22 ns This product has a 8.8 ns. Qg-Gate-Charge is 10 nC.

STF9N60M2 Image

STF9N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF9N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 13.5 ns
  • Rise-Time 7.5 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 5.5 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 780 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 22 ns
  • Typical-Turn-On-Delay-Time 8.8 ns
  • Qg-Gate-Charge 10 nC

STF9N60M2

STF9N60M2 Specifications

STF9N60M2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M2.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 20 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 13.5 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 7.5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 5.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 780 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 22 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.8 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 10 nC

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