STF5NK100Z

STF5NK100Z Overview

Product belongs to the SuperMESH3 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 1154pF @ 25V value of 300pF @ 25V. This product's Standard. 3.5A (Tc) continuous drain-ID current at 25°C; This product has an 3.7 Ohm @ 1.75A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 19 ns of 16 ns. This product has a 7.7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 3.7 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 51.5 ns This product has a 22.5 ns. Qg-Gate-Charge is 42 nC. This product features a 4 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STF5NK100Z Image

STF5NK100Z Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH3
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3 Full Pack
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220FP
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 30W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1000V (1kV)
• Input-Capacitance-Ciss-Vds 1154pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 3.5A (Tc)
• Rds-On-Max-Id-Vgs 3.7 Ohm @ 1.75A, 10V
• Vgs-th-Max-Id 4.5V @ 100μA
• Gate-Charge-Qg-Vgs 59nC @ 10V
• Pd-Power-Dissipation 125 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 19 ns
• Rise-Time 7.7 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 3.5 A
• Vds-Drain-Source-Breakdown-Voltage 1000 V
• Rds-On-Drain-Source-Resistance 3.7 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 51.5 ns
• Typical-Turn-On-Delay-Time 22.5 ns
• Qg-Gate-Charge 42 nC
• Forward-Transconductance-Min 4 S
• Channel-Mode Enhancement

STF5NK100Z FAQ

• A: At what frequency does the Series?

  Q: The product Series is SuperMESH3.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3 Full Pack

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220FP.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1000V (1kV).

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 1154pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 3.5A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 3.7 Ohm @ 1.75A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 125 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 19 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 7.7 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 3.5 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1000 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.7 Ohms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 51.5 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 22.5 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 42 nC.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 4 S.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement