STF5N60M2

Mfr. #: STF5N60M2
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 600V 3.7A TO220FP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STF5N60M2 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF5N60M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 20 W This product's 25 V. The ID of continuous drain current is 3.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 1.26 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 4.5 nC.

STF5N60M2 Image

STF5N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF5N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 20 W
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 3.7 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 1.26 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 4.5 nC

STF5N60M2

STF5N60M2 Specifications

STF5N60M2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 20 W.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3.7 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.26 Ohms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 4.5 nC.

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