STF26N60M2

Mfr. #: STF26N60M2
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 600V 20A TO-220FP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STF26N60M2 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF26N60M2 Overview

RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 165 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel - 55 C minimum operating temperature The power dissipation is 30 W. 1 N-Channel Transistor Type

STF26N60M2 Image

STF26N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF26N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • RoHS Details
  • Mounting Style Through Hole
  • Package / Case TO-220FP-3
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Vds - Drain-Source Breakdown Voltage 600 V
  • Id - Continuous Drain Current 20 A
  • Rds On - Drain-Source Resistance 165 mOhms
  • Vgs - Gate-Source Voltage +/- 25 V
  • Vgs th - Gate-Source Threshold Voltage 2 V
  • Maximum Operating Temperature + 150 C
  • Technology Si
  • Channel Mode Enhancement
  • Brand STMicroelectronics
  • Configuration 1 N-Channel
  • Minimum Operating Temperature - 55 C
  • Pd - Power Dissipation 30 W
  • Transistor Type 1 N-Channel

STF26N60M2

STF26N60M2 Specifications

STF26N60M2 FAQ
  • A: What is the RoHS of the product?

    Q: The RoHS of the product is Details.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-220FP-3

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Transistor Polarity?

    Q: Yes, the product's Transistor Polarity is indeed N-Channel

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 600 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 20 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 165 mOhms

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is +/- 25 V.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed 1 N-Channel

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 30 W.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel.

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