STF24N60M2

Mfr. #: STF24N60M2
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 600V 18A TO220FP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STF24N60M2 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF24N60M2 Overview

Product belongs to the MDmesh II Plus series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 1060pF @ 100V value of 300pF @ 25V. This product's Standard. 18A (Tc) continuous drain-ID current at 25°C; This product has an 190 mOhm @ 9A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 61 ns of 16 ns. This product has a 9 ns of 16 ns. The ID of continuous drain current is 18 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 15 ns This product has a 14 ns. Qg-Gate-Charge is 29 nC.

STF24N60M2 Image

STF24N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF24N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh II Plus
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3 Full Pack
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220FP
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 30W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 1060pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 18A (Tc)
  • Rds-On-Max-Id-Vgs 190 mOhm @ 9A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 29nC @ 10V
  • Pd-Power-Dissipation 30 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 61 ns
  • Rise-Time 9 ns
  • Id-Continuous-Drain-Current 18 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 190 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 15 ns
  • Typical-Turn-On-Delay-Time 14 ns
  • Qg-Gate-Charge 29 nC

STF24N60M2

STF24N60M2 Specifications

STF24N60M2 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh II Plus

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3 Full Pack.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220FP.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 1060pF @ 100V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 18A (Tc)

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 190 mOhm @ 9A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 30 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 61 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 9 ns.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 18 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 190 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 15 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 14 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 29 nC.

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