STF10N60M2

Mfr. #: STF10N60M2
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 600V TO-220FP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STF10N60M2 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STF10N60M2 Overview

Product belongs to the MDmesh II Plus series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Full Pack Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220FP Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 400pF @ 100V value of 300pF @ 25V. This product's Standard. 7.5A (Tc) continuous drain-ID current at 25°C; This product has an 600 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13.2 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 7.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 560 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32.5 ns This product has a 8.8 ns. Qg-Gate-Charge is 13.5 nC.

STF10N60M2 Image

STF10N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STF10N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category IC Chips
  • Series MDmesh II Plus
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3 Full Pack
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220FP
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 25W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 400pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 7.5A (Tc)
  • Rds-On-Max-Id-Vgs 600 mOhm @ 4A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 13.5nC @ 10V
  • Pd-Power-Dissipation 25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 13.2 ns
  • Rise-Time 8 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 7.5 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 560 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 32.5 ns
  • Typical-Turn-On-Delay-Time 8.8 ns
  • Qg-Gate-Charge 13.5 nC

STF10N60M2

STF10N60M2 Specifications

STF10N60M2 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh II Plus

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3 Full Pack.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220FP.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 400pF @ 100V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 7.5A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 600 mOhm @ 4A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 25 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 13.2 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 7.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 560 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 32.5 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.8 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 13.5 nC

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