STE88N65M5

Mfr. #: STE88N65M5
Produttore: STMicroelectronics
Descrizione: IGBT Transistors MOSFET POWER MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STE88N65M5 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STE88N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1 oz SMD/SMT Mounting-Style ISOTOP-4 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 494 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 29 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 88 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 204 nC. This product operates in Enhancement channel mode for optimal performance.

STE88N65M5 Image

STE88N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STE88N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Tube
  • Unit-Weight 1 oz
  • Mounting-Style SMD/SMT
  • Package-Case ISOTOP-4
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 494 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 29 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 88 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 24 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 204 nC
  • Channel-Mode Enhancement

STE88N65M5

STE88N65M5 Specifications

STE88N65M5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is ISOTOP-4.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 494 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 29 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 16 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 88 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 24 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 204 nC

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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1
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31,08 USD
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