| Mfr. #: | STD7NM80-1 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 800V 6.5A IPAK |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STD7NM80-1 Scheda dati |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6.5 A; The Rds On - Drain-Source Resistance of the product is 1.05 Ohms. The Vgs - Gate-Source Voltage attribute for this product is 30 V. 18 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 10 ns - 55 C minimum operating temperature The power dissipation is 90 W. 8 ns Rise Time Product belongs to the N-channel MDmesh series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 35 ns; The 20 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD7NM80-1 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is IPAK-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 800 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 6.5 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 1.05 Ohms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 30 V.
A: What is the Qg - Gate Charge of the product?
Q: The Qg - Gate Charge of the product is 18 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 10 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 90 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 8 ns.
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 35 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 20 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.139332 oz.