STD60N55F3

Mfr. #: STD60N55F3
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 55V 80A DPAK
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STD60N55F3 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD60N55F3 Overview

Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 55V This product has an 2200pF @ 25V value of 300pF @ 25V. This product's Standard. 80A (Tc) continuous drain-ID current at 25°C; This product has an 8.5 mOhm @ 32A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 11.5 ns of 16 ns. This product has a 50 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 8.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 35 ns This product has a 20 ns. This product operates in Enhancement channel mode for optimal performance.

STD60N55F3 Image

STD60N55F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD60N55F3 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series STripFET III
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 110W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 55V
  • Input-Capacitance-Ciss-Vds 2200pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 80A (Tc)
  • Rds-On-Max-Id-Vgs 8.5 mOhm @ 32A, 10V
  • Vgs-th-Max-Id 4V @ 250μA
  • Gate-Charge-Qg-Vgs 45nC @ 10V
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 11.5 ns
  • Rise-Time 50 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 80 A
  • Vds-Drain-Source-Breakdown-Voltage 55 V
  • Rds-On-Drain-Source-Resistance 8.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 35 ns
  • Typical-Turn-On-Delay-Time 20 ns
  • Channel-Mode Enhancement

STD60N55F3

STD60N55F3 Specifications

STD60N55F3 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STripFET III.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D-Pak.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 55V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 2200pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 80A (Tc)

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 8.5 mOhm @ 32A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 11.5 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 50 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 80 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 55 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.5 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 35 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 20 ns.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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