STD2NK90ZT4

Mfr. #: STD2NK90ZT4
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 900V 2.1A DPAK
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STD2NK90ZT4 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD2NK90ZT4 Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 900V This product has an 485pF @ 25V value of 300pF @ 25V. This product's Standard. 2.1A (Tc) continuous drain-ID current at 25°C; This product has an 6.5 Ohm @ 1.05A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 70 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 40 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2.1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The 6.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 21 ns. Qg-Gate-Charge is 19.5 nC. This product features a 2.3 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STD2NK90ZT4 Image

STD2NK90ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD2NK90ZT4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 70W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 900V
  • Input-Capacitance-Ciss-Vds 485pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 2.1A (Tc)
  • Rds-On-Max-Id-Vgs 6.5 Ohm @ 1.05A, 10V
  • Vgs-th-Max-Id 4.5V @ 50μA
  • Gate-Charge-Qg-Vgs 27nC @ 10V
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 40 ns
  • Rise-Time 11 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 2.1 A
  • Vds-Drain-Source-Breakdown-Voltage 900 V
  • Rds-On-Drain-Source-Resistance 6.5 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 43 ns
  • Typical-Turn-On-Delay-Time 21 ns
  • Qg-Gate-Charge 19.5 nC
  • Forward-Transconductance-Min 2.3 S
  • Channel-Mode Enhancement

STD2NK90ZT4

STD2NK90ZT4 Specifications

STD2NK90ZT4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is SuperMESH.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D-Pak.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 900V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 485pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 2.1A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 6.5 Ohm @ 1.05A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 70 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 40 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 11 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 2.1 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 900 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 6.5 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 43 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 21 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 19.5 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 2.3 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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