STBV32-AP

Mfr. #: STBV32-AP
Produttore: STMicroelectronics
Descrizione: RF Bipolar Transistors IGBT & Power Bipola
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STBV32-AP Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STBV32-AP Overview

Product belongs to the STBV32 series. Cut Tape (CT) Alternate Packaging is the packaging method for this product Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Si is the technology used. Through Hole mounting type Supplier device package: TO-92AP Configuration Single Transistor type: NPN Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 5 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 500mA, 1.5A Power-off control: 1500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 1.5 A This product is capable of handling a 1.5 A continuous collector current.

STBV32-AP Image

STBV32-AP

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STBV32-AP Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series STBV32
  • Packaging Cut Tape (CT) Alternate Packaging
  • Mounting-Style Through Hole
  • Package-Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Technology Si
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-92AP
  • Configuration Single
  • Power-Max 1.5W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 1.5A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 5 @ 1A, 2V
  • Vce-Saturation-Max-Ib-Ic 1.5V @ 500mA, 1.5A
  • Current-Collector-Cutoff-Max 1mA
  • Frequency-Transition -
  • Pd-Power-Dissipation 1500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 9 V
  • Maximum-DC-Collector-Current 1.5 A
  • Continuous-Collector-Current 1.5 A

STBV32-AP

STBV32-AP Specifications

STBV32-AP FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STBV32

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Cut Tape (CT) Alternate Packaging.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-92AP

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 1.5A.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 400V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 5 @ 1A, 2V

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.5V @ 500mA, 1.5A

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 1500 mW.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 400 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 9 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 1.5 A.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 1.5 A

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