| Mfr. #: | STB80NF55L-06T4 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | RF Bipolar Transistors MOSFET N-Ch, 55V-0.005ohms 80A |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STB80NF55L-06T4 Scheda dati |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 55 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 16 V. Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 80 ns - 55 C minimum operating temperature The power dissipation is 300 W. 180 ns Rise Time Product belongs to the STB80NF55L series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 135 ns; The 32 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80NF55L-06T4 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-252-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 55 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 80 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 6.5 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 16 V.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 80 ns
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 300 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 180 ns
A: What is the Series of the product?
Q: The Series of the product is STB80NF55L.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 135 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 32 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.139332 oz.