| Mfr. #: | STB80NF55-08T4 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 55V 80A D2PAK |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STB80NF55-08T4 Scheda dati |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 25 ns of 16 ns. This product has a 85 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 80 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 70 ns This product has a 25 ns. This product features a 40 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80NF55-08T4 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 300 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 25 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 85 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 80 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 55 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 70 ns
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 25 ns
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 40 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement