STB57N65M5

Mfr. #: STB57N65M5
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 650V 42A D2PAK
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STB57N65M5 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB57N65M5 Overview

Product belongs to the MDmesh V series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Supplier device package: D2PAK This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 650V This product has an 4200pF @ 100V value of 300pF @ 25V. This product's Standard. 42A (Tc) continuous drain-ID current at 25°C; This product has an 63 mOhm @ 21A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W The ID of continuous drain current is 26.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STB57N65M5 Image

STB57N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB57N65M5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh V
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D2PAK
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 250W
  • Drain-to-Source-Voltage-Vdss 650V
  • Input-Capacitance-Ciss-Vds 4200pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 42A (Tc)
  • Rds-On-Max-Id-Vgs 63 mOhm @ 21A, 10V
  • Vgs-th-Max-Id 5V @ 250μA
  • Gate-Charge-Qg-Vgs 98nC @ 10V
  • Pd-Power-Dissipation 250 W
  • Id-Continuous-Drain-Current 26.5 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 63 mOhms
  • Transistor-Polarity N-Channel

STB57N65M5

STB57N65M5 Specifications

STB57N65M5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh V

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is D2PAK.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 650V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 4200pF @ 100V

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 42A (Tc)

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 63 mOhm @ 21A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 26.5 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 63 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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