STB24NM60N

STB24NM60N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 125 W This product has a 37 ns of 16 ns. This product has a 16.5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 168 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 46 nC.

STB24NM60N Image

STB24NM60N Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel MDmesh
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 125 W
• Fall-Time 37 ns
• Rise-Time 16.5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 17 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 168 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 46 nC

STB24NM60N FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel MDmesh

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-252-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 125 W.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 37 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 16.5 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 17 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 168 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 46 nC.