| Mfr. #: | STB21N65M5 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | IGBT Transistors MOSFET POWER MOSFET N-CH 650V |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STB21N65M5 Scheda dati |


Product belongs to the MDmesh M5 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 10 ns of 16 ns. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 50 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB21N65M5 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh M5
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 125 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 12 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 10 ns.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 17 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 190 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 50 nC