| Mfr. #: | STB155N3H6 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 30V 80A D2PAK |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STB155N3H6 Scheda dati |


RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 900 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 3.6 A; The Rds On - Drain-Source Resistance of the product is 3.7 Ohms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 30 ns - 55 C minimum operating temperature The power dissipation is 125 W. 25 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 90 ns; The 14 ns typical turn-on delay time The Unit Weight is 1.340411 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB155N3H6 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 900 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 3.6 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 3.7 Ohms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 20 V.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 30 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 125 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 25 ns
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 90 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 14 ns
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 1.340411 oz