STB10NK60Z-1

Mfr. #: STB10NK60Z-1
Produttore: STMicroelectronics
Descrizione: MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STB10NK60Z-1 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB10NK60Z-1 Overview

Product belongs to the STB10NK60Z series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style I2PAK-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 115 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 10 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 750 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 55 ns This product has a 20 ns. Qg-Gate-Charge is 50 nC. This product features a 7.8 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STB10NK60Z-1 Image

STB10NK60Z-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB10NK60Z-1 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STB10NK60Z
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case I2PAK-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 115 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 30 ns
  • Rise-Time 20 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 10 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 750 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 55 ns
  • Typical-Turn-On-Delay-Time 20 ns
  • Qg-Gate-Charge 50 nC
  • Forward-Transconductance-Min 7.8 S
  • Channel-Mode Enhancement

STB10NK60Z-1

STB10NK60Z-1 Specifications

STB10NK60Z-1 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STB10NK60Z.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.050717 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is I2PAK-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 115 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 30 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 20 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 10 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 750 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 55 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 20 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 50 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 7.8 S

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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