START499ETR

Mfr. #: START499ETR
Produttore: STMicroelectronics
Descrizione: Bipolar Transistors - BJT Discrete Med P AMP
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: START499ETR Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
START499ETR Overview

Product belongs to the START499ETR series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style SC-82A, SOT-343 Surface Mount mounting type Supplier device package: SOT-343 Configuration Single Transistor type: NPN Maximum current collector Ic is 600mA . Maximum collector-emitter breakdown voltage of 4.5V DC current gain minimum (hFE) of Ic/Vce at 160 @ 160mA, 4V. 3.3dB @ 1.8GHz typical noise figure The device offers a 15dB of 26dB. Power-off control: 600 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 4.5 V The transistor polarity is NPN. The 15 V voltage rating is 40 V. 1.5 V rating of 5 V Max DC collector current: 600 mA Gain-Bandwidth-Product: 42 GHz This product is capable of handling a 600 mA continuous collector current. Minimum hfe for DC collector-base gain is 160.

START499ETR Image

START499ETR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

START499ETR Specifications
  • Manufacturer ST
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series START499ETR
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case SC-82A, SOT-343
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-343
  • Configuration Single
  • Power-Max 600mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 600mA
  • Voltage-Collector-Emitter-Breakdown-Max 4.5V
  • DC-Current-Gain-hFE-Min-Ic-Vce 160 @ 160mA, 4V
  • Frequency-Transition 1.9GHz
  • Noise-Figure-dB-Typ-f 3.3dB @ 1.8GHz
  • Gain 15dB
  • Pd-Power-Dissipation 600 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 4.5 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 15 V
  • Emitter-Base-Voltage-VEBO 1.5 V
  • Maximum-DC-Collector-Current 600 mA
  • Gain-Bandwidth-Product-fT 42 GHz
  • Continuous-Collector-Current 600 mA
  • DC-Collector-Base-Gain-hfe-Min 160

START499ETR

START499ETR Specifications

START499ETR FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed START499ETR

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is SC-82A, SOT-343.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-343.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 600mA

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 4.5V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 160 @ 160mA, 4V

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 3.3dB @ 1.8GHz.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 15dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 600 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 4.5 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 15 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 1.5 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 600 mA.

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 42 GHz.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 600 mA

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 160

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