| Mfr. #: | SCT30N120 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 1200V 45A HIP247 |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | SCT30N120 Scheda dati |
Product belongs to the SiC MOSFETs series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 SiC is the technology used. Operational temperature range: -55°C ~ 200°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: HiP247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1200V (1.2kV) This product has an 1700pF @ 400V value of 300pF @ 25V. This product's Silicon Carbide (SiC). 40A (Tc) continuous drain-ID current at 25°C; This product has an 100 mOhm @ 20A, 20V of 12 Ohm @ 150mA, 0V. Power-off control: 270 W Maximum operating temperature of + 200 C Minimum operating temperature: - 55 C This product has a 28 ns of 16 ns. This product has a 20 ns of 16 ns. This product's - 10 V/+ 25 V. The ID of continuous drain current is 45 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1200 V. This product has a 2.6 V Vgs-th gate-source threshold voltage for efficient power management. The 80 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 19 ns. Qg-Gate-Charge is 105 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SCT30N120 Specifications
A: At what frequency does the Series?
Q: The product Series is SiC MOSFETs.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed SiC
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 200°C (TJ)
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed HiP247
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1200V (1.2kV)
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1700pF @ 400V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Silicon Carbide (SiC).
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 40A (Tc).
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 100 mOhm @ 20A, 20V
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 270 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 200 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 28 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 20 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is - 10 V/+ 25 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 45 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1200 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.6 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 80 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 45 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 19 ns
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 105 nC.