PD57018TR-E

Mfr. #: PD57018TR-E
Produttore: STMicroelectronics
Descrizione: RF MOSFET Transistors POWER R.F.
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: PD57018TR-E Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PD57018TR-E Overview

Product belongs to the PD57018-E series. Type: RF Power MOSFET Reel is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 16.5 dB at 945 MHz of 26dB. Power-off control: 31.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The 760 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

PD57018TR-E Image

PD57018TR-E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57018TR-E Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series PD57018-E
  • Type RF Power MOSFET
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerSO-10RF (Formed Lead)
  • Technology Si
  • Gain 16.5 dB at 945 MHz
  • Output-Power 18 W
  • Pd-Power-Dissipation 31.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Rds-On-Drain-Source-Resistance 760 mOhms
  • Transistor-Polarity N-Channel

PD57018TR-E

PD57018TR-E Specifications

PD57018TR-E FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed PD57018-E

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerSO-10RF (Formed Lead)

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 16.5 dB at 945 MHz

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 31.7 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 1 GHz.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 2.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 65 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 760 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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