MJE3055T

Mfr. #: MJE3055T
Produttore: STMicroelectronics
Descrizione: TRANS NPN 60V 10A TO220AB
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: MJE3055T Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJE3055T Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 10A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 20 @ 4A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 8V @ 3.3A, 10A Power-off control: 75 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 70 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 10 A Gain-Bandwidth-Product: 2 MHz This product is capable of handling a 10 A continuous collector current. Minimum hfe for DC collector-base gain is 20. 70 of 605.

MJE3055T Image

MJE3055T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE3055T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 75W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 10A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 20 @ 4A, 4V
  • Vce-Saturation-Max-Ib-Ic 8V @ 3.3A, 10A
  • Current-Collector-Cutoff-Max 700μA
  • Frequency-Transition 2MHz
  • Pd-Power-Dissipation 75 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.1 V
  • Collector-Base-Voltage-VCBO 70 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 10 A
  • Gain-Bandwidth-Product-fT 2 MHz
  • Continuous-Collector-Current 10 A
  • DC-Collector-Base-Gain-hfe-Min 20
  • DC-Current-Gain-hFE-Max 70

MJE3055T

MJE3055T Specifications

MJE3055T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 10A

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 60V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 20 @ 4A, 4V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 8V @ 3.3A, 10A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 75 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 60 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 1.1 V.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 70 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 10 A.

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 2 MHz.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 10 A.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 20

  • A: What is the DC-Current-Gain-hFE-Max of the product?

    Q: The DC-Current-Gain-hFE-Max of the product is 70.

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0,40 USD
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3,85 USD
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36,44 USD
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