MD2001FX

Mfr. #: MD2001FX
Produttore: STMicroelectronics
Descrizione: Bipolar Transistors - BJT NPN Power Transisto
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: MD2001FX Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MD2001FX Overview

Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Through Hole Mounting-Style ISOWATT218FX Through Hole mounting type Supplier device package: ISOWATT-218FX Configuration Single Transistor type: NPN Maximum current collector Ic is 12A . Maximum collector-emitter breakdown voltage of 700V DC current gain minimum (hFE) of Ic/Vce at 4.5 @ 6A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.8V @ 1.5A, 6A Power-off control: 58 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 700 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.8 V The 9 V voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 18 A Gain-Bandwidth-Product: 64 kHz This product is capable of handling a 12 A continuous collector current. Minimum hfe for DC collector-base gain is 4.5. 7 of 605.

MD2001FX Image

MD2001FX

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MD2001FX Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 1000V Transistors
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case ISOWATT218FX
  • Mounting-Type Through Hole
  • Supplier-Device-Package ISOWATT-218FX
  • Configuration Single
  • Power-Max 58W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 12A
  • Voltage-Collector-Emitter-Breakdown-Max 700V
  • DC-Current-Gain-hFE-Min-Ic-Vce 4.5 @ 6A, 5V
  • Vce-Saturation-Max-Ib-Ic 1.8V @ 1.5A, 6A
  • Current-Collector-Cutoff-Max 200μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 58 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 700 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1.8 V
  • Collector-Base-Voltage-VCBO 9 V
  • Emitter-Base-Voltage-VEBO 9 V
  • Maximum-DC-Collector-Current 18 A
  • Gain-Bandwidth-Product-fT 64 kHz
  • Continuous-Collector-Current 12 A
  • DC-Collector-Base-Gain-hfe-Min 4.5
  • DC-Current-Gain-hFE-Max 7

MD2001FX

MD2001FX Specifications

MD2001FX FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 1000V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed ISOWATT218FX

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is ISOWATT-218FX.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 12A

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 700V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 4.5 @ 6A, 5V

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.8V @ 1.5A, 6A

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 58 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 700 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 1.8 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 9 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 9 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 18 A.

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 64 kHz

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 12 A

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 4.5.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 7

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0,98 USD
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87,82 USD
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