MAT03EHZ

Mfr. #: MAT03EHZ
Produttore: Analog Devices Inc.
Descrizione: Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: MAT03EHZ Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT03EHZ Overview

Product belongs to the MAT03 series. Tube is the packaging method for this product TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 PNP (Dual) Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 36V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 100mV @ 100μA, 1mA Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 36 V The transistor polarity is PNP. Saturation voltage between collector and emitter is 100 mV The 36 V voltage rating is 40 V. Max DC collector current: 20 mA Gain-Bandwidth-Product: 190 MHz Minimum hfe for DC collector-base gain is 80 at 10 uA 36 V.

MAT03EHZ Image

MAT03EHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT03EHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT03
  • Packaging Tube
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 PNP (Dual)
  • Current-Collector-Ic-Max 20mA
  • Voltage-Collector-Emitter-Breakdown-Max 36V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 100mV @ 100μA, 1mA
  • Current-Collector-Cutoff-Max -
  • Frequency-Transition 190MHz
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 36 V
  • Transistor-Polarity PNP
  • Collector-Emitter-Saturation-Voltage 100 mV
  • Collector-Base-Voltage-VCBO 36 V
  • Maximum-DC-Collector-Current 20 mA
  • Gain-Bandwidth-Product-fT 190 MHz
  • DC-Collector-Base-Gain-hfe-Min 80 at 10 uA 36 V

MAT03EHZ

MAT03EHZ Specifications

MAT03EHZ FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MAT03.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-78-6 Metal Can.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-78-6.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 2 PNP (Dual).

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 20mA

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 36V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is -.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 100mV @ 100μA, 1mA.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 125 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 36 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is PNP.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 100 mV

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 36 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 20 mA

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 190 MHz.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 80 at 10 uA 36 V.

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