MAT01AHZ

Mfr. #: MAT01AHZ
Produttore: Analog Devices Inc.
Descrizione: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: MAT01AHZ Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT01AHZ Overview

Product belongs to the MAT01 series. Tray is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.12 V The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz This product is capable of handling a 25 mA continuous collector current. Minimum hfe for DC collector-base gain is 500. 840 of 605.

MAT01AHZ Image

MAT01AHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT01AHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT01
  • Packaging Tray
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 25mA
  • Voltage-Collector-Emitter-Breakdown-Max 45V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 800mV @ 1mA, 10mA
  • Current-Collector-Cutoff-Max 300nA
  • Frequency-Transition 450MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 45 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.12 V
  • Collector-Base-Voltage-VCBO 45 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 25 mA
  • Gain-Bandwidth-Product-fT 450 MHz
  • Continuous-Collector-Current 25 mA
  • DC-Collector-Base-Gain-hfe-Min 500
  • DC-Current-Gain-hFE-Max 840

MAT01AHZ

MAT01AHZ Specifications

MAT01AHZ FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MAT01.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tray.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-78-6 Metal Can

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-78-6.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 2 NPN (Dual) Matched Pair.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 25mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 45V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is -.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 800mV @ 1mA, 10mA.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 45 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 0.12 V

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 45 V

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 5 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 25 mA

  • A: What is the Gain-Bandwidth-Product-fT of the product?

    Q: The Gain-Bandwidth-Product-fT of the product is 450 MHz.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 25 mA.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 500.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 840.

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