LET20045C

Mfr. #: LET20045C
Produttore: STMicroelectronics
Descrizione: RF MOSFET Transistors RF PWR trans Ldmost 2.0 GHz N-Ch ENH
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: LET20045C Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
LET20045C Overview

Product belongs to the LET20045 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 12.5 dB of 26dB. Power-off control: 130 W Maximum operating temperature of + 150 C The operating frequency is 2 GHz. This product's 15 V. The ID of continuous drain current is 12 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. The transistor polarity is N-Channel.

LET20045C Image

LET20045C

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

LET20045C Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series LET20045
  • Type RF Power MOSFET
  • Packaging Bulk
  • Mounting-Style SMD/SMT
  • Package-Case M243
  • Technology Si
  • Gain 12.5 dB
  • Output-Power 65 W
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Operating-Frequency 2 GHz
  • Vgs-Gate-Source-Voltage 15 V
  • Id-Continuous-Drain-Current 12 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Transistor-Polarity N-Channel

LET20045C

LET20045C Specifications

LET20045C FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is LET20045.

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Bulk

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is M243.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 12.5 dB

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 130 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Operating-Frequency?

    Q: Yes, the product's Operating-Frequency is indeed 2 GHz

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 15 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 12 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 80 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

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1
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119,49 USD
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