DN3545N8-G

DN3545N8-G Overview

Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.001862 oz SMD/SMT Mounting-Style TO-243AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: TO-243AA (SOT-89) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 450V This product has an 360pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 200mA (Tj) continuous drain-ID current at 25°C; This product has an 20 Ohm @ 150mA, 0V of 12 Ohm @ 150mA, 0V. Power-off control: 1.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 200 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 450 V. The 20 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 20 ns. This product operates in Depletion channel mode for optimal performance.

DN3545N8-G Image

DN3545N8-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.001862 oz
• Mounting-Style SMD/SMT
• Package-Case TO-243AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-243AA (SOT-89)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 1.6W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 450V
• Input-Capacitance-Ciss-Vds 360pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 200mA (Tj)
• Rds-On-Max-Id-Vgs 20 Ohm @ 150mA, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 1.6 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 30 ns
• Rise-Time 30 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 200 mA
• Vds-Drain-Source-Breakdown-Voltage 450 V
• Rds-On-Drain-Source-Resistance 20 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 30 ns
• Typical-Turn-On-Delay-Time 20 ns
• Channel-Mode Depletion

DN3545N8-G FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.001862 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-243AA.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Surface Mount

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-243AA (SOT-89)

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 450V

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 360pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Depletion Mode

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 200mA (Tj)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 20 Ohm @ 150mA, 0V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 1.6 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 30 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 30 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 200 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 450 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 20 Ohms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 30 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 20 ns

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Depletion.