DN2530N3-G

DN2530N3-G Overview

Product belongs to the - series. Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-92 (TO-226) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 300V This product has an 300pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 175mA (Tj) continuous drain-ID current at 25°C; This product has an 12 Ohm @ 150mA, 0V of 12 Ohm @ 150mA, 0V. Power-off control: 740 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 200 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 300 V. The 12 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 15 ns This product has a 10 ns. This product operates in Depletion channel mode for optimal performance.

DN2530N3-G Image

DN2530N3-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Bulk
• Unit-Weight 0.016000 oz
• Mounting-Style Through Hole
• Package-Case TO-226-3, TO-92-3 (TO-226AA)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-92 (TO-226)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 740mW
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 300V
• Input-Capacitance-Ciss-Vds 300pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 175mA (Tj)
• Rds-On-Max-Id-Vgs 12 Ohm @ 150mA, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 740 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 15 ns
• Rise-Time 15 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 200 mA
• Vds-Drain-Source-Breakdown-Voltage 300 V
• Rds-On-Drain-Source-Resistance 12 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 15 ns
• Typical-Turn-On-Delay-Time 10 ns
• Channel-Mode Depletion

DN2530N3-G FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed -

• A: At what frequency does the Packaging?

  Q: The product Packaging is Bulk.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.016000 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-226-3, TO-92-3 (TO-226AA).

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-92 (TO-226).

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 300V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 300pF @ 25V

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Depletion Mode

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 175mA (Tj)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 12 Ohm @ 150mA, 0V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 740 mW.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 15 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 15 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 200 mA.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 300 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 12 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 15 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 10 ns

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Depletion.