CSD88537ND

CSD88537ND Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.019048 oz SMD/SMT Mounting-Style Trade name: NexFET. 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SOIC Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 60V This product has an 1400pF @ 30V value of 300pF @ 25V. This product's Standard. 15A continuous drain-ID current at 25°C; This product has an 15 mOhm @ 8A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 19 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 12.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 14 nC. This product features a 42 S of 500 S for high performance.

CSD88537ND Image

CSD88537ND Specifications

• Manufacturer TI
• Product Category FETs - Arrays
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.019048 oz
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-SOIC (0.154", 3.90mm Width)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-SOIC
• Configuration Dual
• FET-Type 2 N-Channel (Dual)
• Power-Max 2.1W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 1400pF @ 30V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 15A
• Rds-On-Max-Id-Vgs 15 mOhm @ 8A, 10V
• Vgs-th-Max-Id 3.6V @ 250μA
• Gate-Charge-Qg-Vgs 18nC @ 10V
• Pd-Power-Dissipation 2.1 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 19 ns
• Rise-Time 15 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 16 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 3 V
• Rds-On-Drain-Source-Resistance 12.5 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 14 nC
• Forward-Transconductance-Min 42 S

CSD88537ND FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.019048 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed 8-SOIC (0.154", 3.90mm Width)

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 2 Channel

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 8-SOIC.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Dual.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is 2 N-Channel (Dual).

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 2 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1400pF @ 30V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 15A.

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 15 mOhm @ 8A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 2.1 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 19 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 15 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 16 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 12.5 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 14 nC.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 42 S.