CSD87334Q3D

Mfr. #: CSD87334Q3D
Produttore: Texas Instruments
Descrizione: MOSFET 2N-CH 30V 20A 8SON
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD87334Q3D Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87334Q3D Overview

Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1260pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 12A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 17 ns 17 ns of 16 ns. This product has a 7 ns 7 ns of 16 ns. This product's 8 V 8 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 750 mV 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.3 mOhms 8.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns 11 ns This product has a 4 ns 4 ns. Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC. This product operates in Enhancement channel mode for optimal performance.

CSD87334Q3D Image

CSD87334Q3D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87334Q3D Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Tape & Reel (TR) Alternate Packaging
  • Unit-Weight 0.002677 oz
  • Mounting-Style SMD/SMT
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (3.3x3.3)
  • Configuration Dual
  • FET-Type 2 N-Channel (Dual) Asymmetrical
  • Power-Max 6W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 1260pF @ 15V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 20A
  • Rds-On-Max-Id-Vgs 6 mOhm @ 12A, 8V
  • Vgs-th-Max-Id 1.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.3nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 17 ns 17 ns
  • Rise-Time 7 ns 7 ns
  • Vgs-Gate-Source-Voltage 8 V 8 V
  • Id-Continuous-Drain-Current 20 A 20 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 750 mV 750 mV
  • Rds-On-Drain-Source-Resistance 8.3 mOhms 8.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns 11 ns
  • Typical-Turn-On-Delay-Time 4 ns 4 ns
  • Qg-Gate-Charge 750 mV 6.4 nC 6.4 nC
  • Channel-Mode Enhancement

CSD87334Q3D

CSD87334Q3D Specifications

CSD87334Q3D FAQ
  • A: At what frequency does the Series?

    Q: The product Series is NexFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tape & Reel (TR) Alternate Packaging

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.002677 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-PowerTDFN.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is 2 N-Channel (Dual) Asymmetrical.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 30V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 1260pF @ 15V

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Logic Level Gate.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 20A.

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 6 mOhm @ 12A, 8V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 6 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 17 ns 17 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 7 ns 7 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 8 V 8 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 20 A 20 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 750 mV 750 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.3 mOhms 8.3 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns 11 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 4 ns 4 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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