| Mfr. #: | CSD87333Q3DT |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | Darlington Transistors MOSFET High Duty Cycle Sync Buck NexFET |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD87333Q3DT Scheda dati |


Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: 125°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 662pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate, 5V Drive. 15A continuous drain-ID current at 25°C; This product has an 14.3 mOhm @ 4A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.2 ns of 16 ns. This product has a 3.9 ns of 16 ns. The ID of continuous drain current is 15 A 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 0.95 V Vgs-th gate-source threshold voltage for efficient power management. The 13.4 mOhms 13.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 9.4 ns This product has a 2.1 ns. Qg-Gate-Charge is 3.5 nC. This product features a 43 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87333Q3DT Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.002677 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-PowerTDFN.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is 125°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 2 Channel
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (3.3x3.3)
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is 2 N-Channel (Dual) Asymmetrical.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 662pF @ 15V
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Logic Level Gate, 5V Drive
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 15A.
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 14.3 mOhm @ 4A, 8V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 6 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 2.2 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 3.9 ns.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 15 A 15 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V 30 V
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 0.95 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 13.4 mOhms 13.4 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 9.4 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 2.1 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 3.5 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 43 S.