CSD87333Q3DT

Mfr. #: CSD87333Q3DT
Produttore: Texas Instruments
Descrizione: Darlington Transistors MOSFET High Duty Cycle Sync Buck NexFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD87333Q3DT Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87333Q3DT Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: 125°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 662pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate, 5V Drive. 15A continuous drain-ID current at 25°C; This product has an 14.3 mOhm @ 4A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.2 ns of 16 ns. This product has a 3.9 ns of 16 ns. The ID of continuous drain current is 15 A 15 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 0.95 V Vgs-th gate-source threshold voltage for efficient power management. The 13.4 mOhms 13.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 9.4 ns This product has a 2.1 ns. Qg-Gate-Charge is 3.5 nC. This product features a 43 S of 500 S for high performance.

CSD87333Q3DT Image

CSD87333Q3DT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87333Q3DT Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.002677 oz
  • Mounting-Style SMD/SMT
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature 125°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 8-VSON (3.3x3.3)
  • Configuration Single
  • FET-Type 2 N-Channel (Dual) Asymmetrical
  • Power-Max 6W
  • Transistor-Type 2 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 662pF @ 15V
  • FET-Feature Logic Level Gate, 5V Drive
  • Current-Continuous-Drain-Id-25°C 15A
  • Rds-On-Max-Id-Vgs 14.3 mOhm @ 4A, 8V
  • Vgs-th-Max-Id 1.2V @ 250μA
  • Gate-Charge-Qg-Vgs 4.6nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 2.2 ns
  • Rise-Time 3.9 ns
  • Id-Continuous-Drain-Current 15 A 15 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 0.95 V
  • Rds-On-Drain-Source-Resistance 13.4 mOhms 13.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 9.4 ns
  • Typical-Turn-On-Delay-Time 2.1 ns
  • Qg-Gate-Charge 3.5 nC
  • Forward-Transconductance-Min 43 S

CSD87333Q3DT

CSD87333Q3DT Specifications

CSD87333Q3DT FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.002677 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerTDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is 125°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 2 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (3.3x3.3)

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is 2 N-Channel (Dual) Asymmetrical.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 662pF @ 15V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Logic Level Gate, 5V Drive

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 15A.

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 14.3 mOhm @ 4A, 8V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 2.2 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 3.9 ns.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 15 A 15 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V 30 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 0.95 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 13.4 mOhms 13.4 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 9.4 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 2.1 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 3.5 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 43 S.

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