| Mfr. #: | CSD87312Q3E |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | MOSFET 2N-CH 30V 27A 8VSON |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD87312Q3E Scheda dati |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-VSON (5x6) Configuration Dual Common Source This product uses an 2 N-Channel (Dual) Common Source FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 1250pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 27A continuous drain-ID current at 25°C; This product has an 33 mOhm @ 7A , 8V of 12 Ohm @ 150mA, 0V. Power-off control: 2.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.8 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 27 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 38 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 17 ns This product has a 7.8 ns. Qg-Gate-Charge is 6.3 nC. This product features a 39 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87312Q3E Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-PowerTDFN.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (5x6)
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual Common Source
A: What is the FET-Type of the product?
Q: The FET-Type of the product is 2 N-Channel (Dual) Common Source.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1250pF @ 15V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 27A
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 33 mOhm @ 7A , 8V
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 2.5 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 2.8 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 16 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 27 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 38 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 17 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7.8 ns
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 6.3 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 39 S.