| Mfr. #: | CSD86311W1723 |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | Trans MOSFET N-CH 25V 4.5A 12-Pin Wafer T/R |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD86311W1723 Scheda dati |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 12-UFBGA, DSBGA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 12-DSBGA (1.53x1.98) Configuration Dual Common Source This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 25V This product has an 585pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 4.5A continuous drain-ID current at 25°C; This product has an 39 mOhm @ 2A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 1.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.9 ns of 16 ns. This product has a 4.3 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 4.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 42 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13.2 ns This product has a 5.4 ns. Qg-Gate-Charge is 3.1 nC. This product features a 6.4 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD86311W1723 Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: At what frequency does the Package-Case?
Q: The product Package-Case is 12-UFBGA, DSBGA.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 12-DSBGA (1.53x1.98)
A: What is the Configuration of the product?
Q: The Configuration of the product is Dual Common Source.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is 2 N-Channel (Dual).
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 25V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 585pF @ 12.5V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Logic Level Gate.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 4.5A.
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 39 mOhm @ 2A, 8V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1.5 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 2.9 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 4.3 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 4.5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 42 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13.2 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 5.4 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 3.1 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 6.4 S.