CSD25484F4T

Mfr. #: CSD25484F4T
Produttore: Texas Instruments
Descrizione: MOSFET P-CH 20V 2.5A 3PICOSTAR
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD25484F4T Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25484F4T Overview

Product belongs to the CSD25484F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. LGA-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8.5 ns of 16 ns. This product has a 5 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 825 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 9.5 ns. Qg-Gate-Charge is 1090 pC. This product features a 3.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD25484F4T Image

CSD25484F4T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25484F4T Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25484F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename FemtoFET
  • Package-Case LGA-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8.5 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 1.2 V
  • Rds-On-Drain-Source-Resistance 825 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 18 ns
  • Typical-Turn-On-Delay-Time 9.5 ns
  • Qg-Gate-Charge 1090 pC
  • Forward-Transconductance-Min 3.5 S
  • Channel-Mode Enhancement

CSD25484F4T

CSD25484F4T Specifications

CSD25484F4T FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD25484F4

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is FemtoFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is LGA-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 8.5 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 12 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 1.2 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 825 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 18 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 9.5 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 1090 pC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 3.5 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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