CSD19506KCS

Mfr. #: CSD19506KCS
Produttore: Texas Instruments
Descrizione: Darlington Transistors MOSFET 80V N-CH Power MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD19506KCS Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19506KCS Overview

Product belongs to the CSD19506KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 375 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 273 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 19 ns. Qg-Gate-Charge is 120 nC. This product features a 297 S of 500 S for high performance.

CSD19506KCS Image

CSD19506KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19506KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD19506KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 375 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 10 ns
  • Rise-Time 11 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 273 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.5 V
  • Rds-On-Drain-Source-Resistance 2.2 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 30 ns
  • Typical-Turn-On-Delay-Time 19 ns
  • Qg-Gate-Charge 120 nC
  • Forward-Transconductance-Min 297 S

CSD19506KCS

CSD19506KCS Specifications

CSD19506KCS FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD19506KCS.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 375 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 10 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 11 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 273 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.5 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 2.2 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 30 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 19 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 120 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 297 S

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