| Mfr. #: | CSD19505KCS |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | Darlington Transistors MOSFET 80V N-CH NexFET Pwr MOSFET |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD19505KCS Scheda dati |


Product belongs to the CSD19505KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 6 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 208 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.6 V Vgs-th gate-source threshold voltage for efficient power management. The 2.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 76 nC. This product features a 262 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19505KCS Specifications
A: At what frequency does the Series?
Q: The product Series is CSD19505KCS.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.211644 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 300 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 6 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 16 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 208 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.6 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 2.9 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 76 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 262 S.