CSD19505KCS

Mfr. #: CSD19505KCS
Produttore: Texas Instruments
Descrizione: Darlington Transistors MOSFET 80V N-CH NexFET Pwr MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD19505KCS Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19505KCS Overview

Product belongs to the CSD19505KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 6 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 208 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.6 V Vgs-th gate-source threshold voltage for efficient power management. The 2.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 76 nC. This product features a 262 S of 500 S for high performance.

CSD19505KCS Image

CSD19505KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19505KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD19505KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 208 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.6 V
  • Rds-On-Drain-Source-Resistance 2.9 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 76 nC
  • Forward-Transconductance-Min 262 S

CSD19505KCS

CSD19505KCS Specifications

CSD19505KCS FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD19505KCS.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 300 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 6 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 16 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 208 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.6 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.9 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 76 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 262 S.

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Quantità
Prezzo unitario
est. Prezzo
1
1,86 USD
1,86 USD
10
1,77 USD
17,67 USD
100
1,67 USD
167,40 USD
500
1,58 USD
790,50 USD
1000
1,49 USD
1 488,00 USD
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