CSD18532NQ5B

Mfr. #: CSD18532NQ5B
Produttore: Texas Instruments
Descrizione: MOSFET N-CH 60V 22A 8VSON
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD18532NQ5B Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18532NQ5B Overview

Product belongs to the CSD18532NQ5B series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-Clip-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.7 ns of 16 ns. This product has a 8.7 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 163 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 3.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 8.2 ns. Qg-Gate-Charge is 49 nC. This product features a 140 S of 500 S for high performance.

CSD18532NQ5B Image

CSD18532NQ5B

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18532NQ5B Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18532NQ5B
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-Clip-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3.2 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 2.7 ns
  • Rise-Time 8.7 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 163 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
  • Rds-On-Drain-Source-Resistance 3.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 20 ns
  • Typical-Turn-On-Delay-Time 8.2 ns
  • Qg-Gate-Charge 49 nC
  • Forward-Transconductance-Min 140 S

CSD18532NQ5B

CSD18532NQ5B Specifications

CSD18532NQ5B FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD18532NQ5B.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is VSON-Clip-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3.2 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 2.7 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 8.7 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 163 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.8 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 3.5 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 20 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.2 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 49 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 140 S.

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