CSD18504KCS

Mfr. #: CSD18504KCS
Produttore: Texas Instruments
Descrizione: Darlington Transistors MOSFET 40V N-Ch NexFET Pwr MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD18504KCS Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18504KCS Overview

Product belongs to the CSD18504KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 93 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4.2 ns of 16 ns. This product has a 5.2 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 85 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 10 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11.2 ns This product has a 4.4 ns. Qg-Gate-Charge is 19 nC. This product features a 72 S of 500 S for high performance.

CSD18504KCS Image

CSD18504KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18504KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18504KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 93 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.2 ns
  • Rise-Time 5.2 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 85 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 10 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11.2 ns
  • Typical-Turn-On-Delay-Time 4.4 ns
  • Qg-Gate-Charge 19 nC
  • Forward-Transconductance-Min 72 S

CSD18504KCS

CSD18504KCS Specifications

CSD18504KCS FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD18504KCS

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 93 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 4.2 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 5.2 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 85 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 40 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 10 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11.2 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 4.4 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 19 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 72 S.

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est. Prezzo
1
0,67 USD
0,67 USD
10
0,64 USD
6,37 USD
100
0,60 USD
60,35 USD
500
0,57 USD
284,95 USD
1000
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536,40 USD
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