CSD18503KCS

Mfr. #: CSD18503KCS
Produttore: Texas Instruments
Descrizione: MOSFET N-CH 40V 100A TO220-3
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD18503KCS Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD18503KCS Overview

Product belongs to the CSD18503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 143 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.8 ns of 16 ns. This product has a 5.3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 6.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14 ns This product has a 5.7 ns. Qg-Gate-Charge is 30 nC. This product features a 98 S of 500 S for high performance.

CSD18503KCS Image

CSD18503KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD18503KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD18503KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 143 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.8 ns
  • Rise-Time 5.3 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 130 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 6.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 14 ns
  • Typical-Turn-On-Delay-Time 5.7 ns
  • Qg-Gate-Charge 30 nC
  • Forward-Transconductance-Min 98 S

CSD18503KCS

CSD18503KCS Specifications

CSD18503KCS FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD18503KCS.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.211644 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 143 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 6.8 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 5.3 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 130 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 40 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 6.8 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 14 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 5.7 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 30 nC

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 98 S

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0,87 USD
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78,30 USD
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