| Mfr. #: | CSD17381F4 |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | Trans MOSFET N-CH 30V 3.1A 3-Pin PICOSTAR T/R |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD17381F4 Scheda dati |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 195pF @ 15V value of 300pF @ 25V. This product's Standard. 3.1A (Ta) continuous drain-ID current at 25°C; This product has an 109 mOhm @ 500mA, 8A of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.6 ns of 16 ns. This product has a 1.4 ns of 16 ns. This product's 12 V. The ID of continuous drain current is 10 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 117 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 10.8 ns This product has a 3.4 ns. Qg-Gate-Charge is 1.04 nC. This product features a 4.8 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD17381F4 Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 3-XFDFN.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 3-PICOSTAR.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 195pF @ 15V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 3.1A (Ta)
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 109 mOhm @ 500mA, 8A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 500 mW.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 3.6 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 1.4 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 12 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 10 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 850 mV.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 117 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 10.8 ns.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 3.4 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 1.04 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 4.8 S.