| Mfr. #: | CSD16413Q5A |
|---|---|
| Produttore: | Texas Instruments |
| Descrizione: | MOSFET N-CH 25V 100A 8-SON |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | CSD16413Q5A Scheda dati |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1780pF @ 12.5V value of 300pF @ 25V. This product's Standard. 24A (Ta), 100A (Tc) continuous drain-ID current at 25°C; This product has an 3.9 mOhm @ 24A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 5.7 ns of 16 ns. This product has a 15.9 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 24 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 5.6 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 10.7 ns This product has a 9.1 ns. Qg-Gate-Charge is 9 nC. This product features a 95 s of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD16413Q5A Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-PowerTDFN.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-VSON (5x6).
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 25V
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 1780pF @ 12.5V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 24A (Ta), 100A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 3.9 mOhm @ 24A, 10V.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 3.1 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 5.7 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 15.9 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 24 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 25 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.6 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.6 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 10.7 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 9.1 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 9 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 95 s
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.