CSD16410Q5A

Mfr. #: CSD16410Q5A
Produttore: Texas Instruments
Descrizione: Trans MOSFET N-CH 25V 16A 8-Pin VSONP EP T/R
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD16410Q5A Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16410Q5A Overview

Product belongs to the CSD16410Q5A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-FET-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.6 ns of 16 ns. This product has a 10.7 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The 12 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6.5 ns This product has a 6.2 ns. Qg-Gate-Charge is 3.9 nC. This product features a 38 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16410Q5A Image

CSD16410Q5A

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16410Q5A Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD16410Q5A
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-FET-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.6 ns
  • Rise-Time 10.7 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Rds-On-Drain-Source-Resistance 12 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 6.5 ns
  • Typical-Turn-On-Delay-Time 6.2 ns
  • Qg-Gate-Charge 3.9 nC
  • Forward-Transconductance-Min 38 S
  • Channel-Mode Enhancement

CSD16410Q5A

CSD16410Q5A Specifications

CSD16410Q5A FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD16410Q5A.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is VSON-FET-8.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 3.6 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10.7 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 16 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 16 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 25 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.9 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 12 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 6.5 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 6.2 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 3.9 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 38 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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