CSD16407Q5

Mfr. #: CSD16407Q5
Produttore: Texas Instruments
Descrizione: MOSFET N-CH 25V 100A 8-SON
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD16407Q5 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16407Q5 Overview

Product belongs to the CSD16407Q5 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-Clip-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9 ns of 16 ns. This product has a 18.4 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 31 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 3.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 11.9 ns. Qg-Gate-Charge is 13.3 nC. This product features a 111 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16407Q5 Image

CSD16407Q5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16407Q5 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series CSD16407Q5
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-Clip-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3.1 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 9 ns
  • Rise-Time 18.4 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 31 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.6 V
  • Rds-On-Drain-Source-Resistance 3.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 16 ns
  • Typical-Turn-On-Delay-Time 11.9 ns
  • Qg-Gate-Charge 13.3 nC
  • Forward-Transconductance-Min 111 S
  • Channel-Mode Enhancement

CSD16407Q5

CSD16407Q5 Specifications

CSD16407Q5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD16407Q5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is VSON-Clip-8.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 3.1 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 9 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 18.4 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 31 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.6 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 3.3 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 16 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 11.9 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 13.3 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 111 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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