CSD16323

Mfr. #: CSD16323
Produttore: Texas Instruments
Descrizione:
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD16323 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16323 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1300pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 21A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 4.5 mOhm @ 24A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.3 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.1 V Vgs-th gate-source threshold voltage for efficient power management. The 4.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.3 ns. Qg-Gate-Charge is 6.2 nC. This product operates in Enhancement channel mode for optimal performance.

CSD16323 Image

CSD16323

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16323 Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (3.3x3.3)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 25V
  • Input-Capacitance-Ciss-Vds 1300pF @ 12.5V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 21A (Ta), 60A (Tc)
  • Rds-On-Max-Id-Vgs 4.5 mOhm @ 24A, 8V
  • Vgs-th-Max-Id 1.4V @ 250μA
  • Gate-Charge-Qg-Vgs 8.4nC @ 4.5V
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.3 ns
  • Rise-Time 15 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 21 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.1 V
  • Rds-On-Drain-Source-Resistance 4.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 5.3 ns
  • Qg-Gate-Charge 6.2 nC
  • Channel-Mode Enhancement

CSD16323

CSD16323 Specifications

CSD16323 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-PowerTDFN

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 25V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1300pF @ 12.5V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Logic Level Gate

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 21A (Ta), 60A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 4.5 mOhm @ 24A, 8V

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 3 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 6.3 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 15 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 10 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 21 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.1 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 4.4 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.3 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 6.2 nC

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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